发明名称 PATTERNING PROCESS
摘要 <p>Provided is a method for forming pattern including a process of removing a resist lower layer without damaging an object to be processed by using wet type stripping liquor having a condition more mild than that of the existing stripping liquor. The method for forming pattern comprises process (1) of forming an organic lower layer on an object to be processed where a hard mask containing titanium is formed; process (2) of forming a resist lower layer containing 10 mass% to 60 mass% of titanium on the organic lower layer; process (3) of forming a photo-resist layer on the resist lower layer containing titanium; process (4) of forming photo-resist pattern by exposing and developing the photo-resist layer; process (5) of radiating the pattern on the resist lower layer containing titanium by making the photo-resist pattern a mask; process (6) of radiating the pattern on the organic lower layer by making the resist lower layer containing titanium a mask; and process (7) of removing the hard mask containing titanium and the resist lower layer containing titanium through a wet type stripping method.</p>
申请公布号 KR20140108130(A) 申请公布日期 2014.09.05
申请号 KR20140020256 申请日期 2014.02.21
申请人 SHIN-ETSU CHEMICAL CO., LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 OGIHARA TSUTOMU;UEDA TAKAFUMI;TACHIBANA SEIICHIRO;TANEDA YOSHINORI;GLODDE MARTIN;LAWSON MARGARET C.;HUANG WU SONG
分类号 H01L21/027 主分类号 H01L21/027
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