METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having uniform display characteristics, which is affected less by a plasma damage during a manufacturing process of the semiconductor device, and has reduced variation in a threshold voltage.SOLUTION: The semiconductor device comprises: a planarization layer 113 on a transistor; and a barrier layer 112 which is provided on the upper surface or the lower surface of the planarization layer 113 and suppresses diffusion of moisture and degassed components from the planarization layer 113. A devised positional relationship between the planarization layer 113 and the barrier layer 112 leads to a device configuration which is effective in reducing plasma damage to the planarization layer 113. In combination with a new structure of a pixel electrode 158, an effect such as improvement in luminance is also added.