SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

A silicon carbide film (90) includes a drift layer (81) that forms a first main surface (P1) and is of a first conductivity type. The drift layer (81) has a first region (81A) that forms the first main surface (P1), and a second region (81B) that is provided on the first region (81A) with an interface (IF) therebetween. The interface (IF) has a center surface (FC), and an outer peripheral surface (FT) that surrounds the center surface (FC). The silicon carbide film (90) includes an embedded region that is partially provided in the interface (IF) and is of a second conductivity type. The embedded region has an electric field attenuated region (71) that is provided to the center surface (FC), and a guard ring region (73) that is provided to the outer peripheral surface (FT). A transistor element and a Schottky barrier diode element are arranged on the center surface (FC) and the outer peripheral surface.