| 摘要 |
A semiconductor device capable of, regardless of frequency, suppressing propagation of unnecessary signals to a semiconductor element or a semiconductor circuit through a semiconductor substrate, and of suppressing deterioration of signal quality of the semiconductor device caused by parasitic capacitive coupling. The semiconductor device is provided with a semiconductor substrate (100), a semiconductor element (105) which is formed on the surface portion of the semiconductor substrate (100) and which emits signals, a signal line (103) which is connected to the semiconductor element (105), and a polysilicon layer (102) which is formed to be positioned upon the semiconductor substrate (100) immediately beneath the signal line (103). |
