| 发明名称 |
HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE |
| 摘要 |
A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules. |
| 申请公布号 |
US2014246681(A1) |
申请公布日期 |
2014.09.04 |
| 申请号 |
US201414277820 |
申请日期 |
2014.05.15 |
| 申请人 |
Cree, Inc. |
发明人 |
Das Mrinal K.;Lin Henry;Schupbach Marcelo;Palmour John Williams |
| 分类号 |
H01L27/06 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power module comprising:
a housing with an interior chamber; and a plurality of switch modules mounted within the interior chamber and interconnected to facilitate switching power to a load wherein each of the plurality of switch modules comprises at least one transistor and at least one diode and the power module is able to block 1200 volts, conduct 300 amperes, and has switching losses of less than 20 milli-Joules. |
| 地址 |
Durham NC US |
