DEFECT REMOVAL PROCESS

摘要

A process is provided for the removal of defects, for example, micro-bridging defects during device fabrication. In one aspect, a method includes: obtaining a wafer after lithography processing and exposing the wafer to at least one electron beam. In another aspect, a system includes: selecting a substrate with micro-bridging defects after the substrate undergoes lithography processing; preparing the substrate for exposure to at least one electron beam; and exposing the substrate to the at least one electron beam.

主权项

1. A method, comprising:
obtaining a wafer after lithography processing; and exposing the wafer to at least one electron beam; wherein the at least one electron beam is a uniform electron beam, the at least electron beam includes a beam current and an acceleration voltage, the beam current ranges from approximately 1 pA to 100 pA, the acceleration voltage ranges from approximately 50 V to 800 V, and the at least one electron beam includes a time of exposure ranging from approximately 1 s/die to 100 s/die.