发明名称 |
METHODS FOR ENHANCING P-TYPE DOPING IN III-V SEMICONDUCTOR FILMS |
摘要 |
Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process. |
申请公布号 |
EP2636060(A4) |
申请公布日期 |
2014.09.03 |
申请号 |
EP20110837213 |
申请日期 |
2011.10.28 |
申请人 |
UNIVERSITY OF UTAH RESEARCH FOUNDATION |
发明人 |
LIU, FENG;STRINGFELLOW, GERALD;ZHU, JUNYI |
分类号 |
H01L21/8252;H01L21/02;H01L21/36 |
主分类号 |
H01L21/8252 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|