| 摘要 |
The semiconductor device for detection of radiation comprises a semiconductor substrate (1) with a main surface (11), a dielectric layer (6) comprising at least one compound of a semiconductor material, an integrated circuit (2) including at least one component sensitive to radiation (3), a wiring (4) of the integrated circuit, an electrically conductive through-substrate via (5) contacting the wiring, and a structured filter layer (7) arranged immediately on the dielectric layer above the component sensitive to radiation. |
