| 发明名称 | Temperature measuring method, storage medium, and program | ||
| 摘要 | A temperature measuring method includes: transmitting a light to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length; compensating for the optical path length from the first interference wave to the second interference wave; and calculating a temperature of the object at the measurement point. | ||
| 申请公布号 | US8825434(B2) | 申请公布日期 | 2014.09.02 |
| 申请号 | US201113248538 | 申请日期 | 2011.09.29 |
| 申请人 | Tokyo Electron Limited | 发明人 | Koshimizu Chishio;Yamawaku Jun;Matsudo Tatsuo |
| 分类号 | G01K11/00;G01K11/12;G01B11/06;G01B9/02 | 主分类号 | G01K11/00 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP |
| 主权项 | 1. A temperature measuring method comprising: transmitting a light from a light source to a measurement point of an object to be measured, the object being a substrate on which a thin film is formed; measuring a first interference wave caused by a reflected light from a surface of the substrate, and a second interference wave caused by reflected lights from an interface between the substrate and the thin film and from a rear surface of the thin film; calculating an optical path length from the first interference wave to the second interference wave; calculating a film thickness of the thin film based on an intensity of the second interference wave; calculating an optical path difference between an optical path length of the substrate and the calculated optical path length, based on the calculated film thickness of the thin film; compensating for the optical path length from the first interference wave to the second interference wave based on the calculated optical path difference; and calculating a temperature of the object at the measurement point based on the compensated optical path length. | ||
| 地址 | JP | ||