发明名称 |
Method for patterning semiconductor structure |
摘要 |
A method for patterning a semiconductor structure is provided. The method comprises following steps. A first mask defining a first pattern in a first region and a second pattern in a second region adjacent to the first region is provided. The first pattern defined by the first mask is transferred to a first film structure in the first region, and the second pattern defined by the first mask is transferred to the first film structure in the second region. A second film structure is formed on the first film structure. A second mask defining a third pattern in the first region is provided. At least 50% of a part of the first region occupied by the first pattern defined by the first mask is identical with a part of the first region occupied by the third pattern defined by the second mask. |
申请公布号 |
US8822328(B1) |
申请公布日期 |
2014.09.02 |
申请号 |
US201313787912 |
申请日期 |
2013.03.07 |
申请人 |
United Microelectronics Corp. |
发明人 |
Huang Chia-Wei;Chen Ming-Jui;Tseng Ting-Cheng;Hsieh Ping-I |
分类号 |
H01L21/4763;H01L21/302;H01L21/308 |
主分类号 |
H01L21/4763 |
代理机构 |
WPAT, PC |
代理人 |
WPAT, PC ;King Justin |
主权项 |
1. A method for patterning a semiconductor structure, comprising:
providing a first mask defining a first pattern in a first region and a second pattern in a second region adjacent to the first region; transferring the first pattern defined by the first mask to a first film structure in the first region and the second pattern defined by the first mask to the first film structure in the second region; forming a second film structure on the first film structure; providing a second mask defining a third pattern in the first region, wherein at least 50% of a part of the first region occupied by the first pattern defined by the first mask is identical with a part of the first region occupied by the third pattern defined by the second mask; transferring the third pattern defined by the second mask to the second film structure in the first region; transferring the third pattern in the second film structure to the first film structure; and transferring the second pattern and a film pattern composed of the first pattern and the third pattern all landing on the same level of an upper portion of the first film structure down into a lower portion of the first film structure at the same time. |
地址 |
Hsinchu TW |