| 摘要 |
The present disclosure provides a photodetector device comprising a lattice matched heterostructure with a sequence of a first contact layer (12), an absorbing layer (13), a barrier layer (14), and a second contact layer(15). The absorbing layer (12) is made of a ternary alloy of InPSb. An energy bandgap of the barrier layer (14) is wider than that of the absorbing layer (12) and is configured so that the conduction band of the barrier layer (14) presents a discontinuity with the conduction band of the absorbing layer (12). The barrier layer (14) blocks the flow of thermally generated majority carriers while allowing the flow of minority carriers from the absorbing layer (12) across the barrier layer. The absorbing layer, the barrier layer, and the first and second contact layers are configured so that substantially no offset appear at the valence band edge. The photodetector device allows radiation detection in the extended wavelength SWIR range at operating temperatures close to room temperature. |
