| 摘要 |
<p>A semiconductor device is provided with: p-type base layers (2) selectively formed on one main surface of an n-substrate (1); n-type source layers (3) formed on the surfaces of the p-type base layers; p-type high-concentration emitter layers (7) and p-type low-concentration emitter layers (8) provided separately from each other on another main surface of the n-substrate (1); an emitter electrode electrically connected to the p-type base layers (2) and the n-type source layers (3); gate electrodes (6) provided on the surfaces of the p-type base layers (2) so as to be sandwiched between the n-substrate (1) and the n-type source layers (3) across gate oxide films (5); and a collector electrode individually electrically connected to each of the p-type high-concentration emitter layers (7) and the p-type low-concentration emitter layers (8).</p> |
