METHOD FOR EVALUATING OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR QUALITY CONTROL OF OXIDE SEMICONDUCTOR THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for simply evaluating (projecting/estimating) the stress resistance of an oxide semiconductor thin film in a non-destructive and non-contact manner.SOLUTION: A sample on which an oxide semiconductor thin film is formed is irradiated with excitation light or an electron beam, and the stress resistance of the oxide semiconductor thin film is evaluated on the basis of the light emission intensity of excited luminescent light. The occurrence state or the like of a defect level or the like generated in an oxide thin film can be confirmed by observing the fluorescence intensity generated between other energy levels with a fluorescence intensity Icorresponding to a band gap as a reference, and the quality of the oxide thin film can be controlled by monitoring the value of the fluorescence intensity.