| 摘要 |
The present invention relates to a method for controlling a thermal diffusion doping profile, which can selectively control the form of the thermal diffusion doping profile by presenting a diffusion degree (D) function having a plurality of variables and applying the diffusion degree (D) function to a doping profile function. To achieve the above purpose, the method for controlling a thermal diffusion doping profile according to the present invention is characterized by representing, by the following Equation 1, a doping profile formed within a crystalline silicon substrate by the thermal diffusion of impurity ions, representing the diffusion degree (D) of Equation 1 by the following Equation 2, and controlling the form of the doping profile by the control of variables (a, b, d, k) of Equation 2, wherein C is defined as doping density, D is defined as diffusion degree, x is defined as diffusion depth, and t is defined as diffusion time in Equation 1, and wherein D is defined as defined as diffusion degree and C is defined as doping density in Equation 2. |
