发明名称 |
IONIC FIELD EFFECT TRANSISTOR HAVING HETEROGENEOUS TRIANGULAR NANOCHANNEL AND METHOD OF MANUFACTURING THE SAME |
摘要 |
An ionic field effect transistor includes: a substrate; a polymer layer that is formed on the substrate and in which a first flow path and a second flow path that is separately disposed from the first flow path are formed; and a gate electrode that is formed between the substrate and the polymer layer and that contacts the first flow path and the second flow path, wherein a heterogeneous triangular nanochannel that connects the first flow path and the second flow path is formed between the gate electrode and the polymer layer. |
申请公布号 |
US2014238521(A1) |
申请公布日期 |
2014.08.28 |
申请号 |
US201414181820 |
申请日期 |
2014.02.17 |
申请人 |
POSTECH ACADEMY-INDUSTRY FOUNDATION |
发明人 |
LIM Geunbae;Kim Sung-Jae;Kim Bumjoo;Heo Joonseong;Kwon Hyukjin J. |
分类号 |
F17D1/08 |
主分类号 |
F17D1/08 |
代理机构 |
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代理人 |
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主权项 |
1. An ionic field effect transistor, comprising:
a substrate; a polymer layer that is formed on the substrate and in which a first flow path and a second flow path that is separately disposed from the first flow path are formed; and a gate electrode that is formed between the substrate and the polymer layer and that contacts the first flow path and the second flow path, wherein a heterogeneous triangular nanochannel that connects the first flow path and the second flow path is formed between the gate electrode and the polymer layer. |
地址 |
Pohang-si KR |