发明名称 ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY MODULE INCLUDING TFT HAVING IMPROVED MOBILITY AND METHOD OF FABRICATING THE SAME
摘要 An array substrate for a liquid crystal display device includes a gate line and a gate electrode on a substrate, the gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode; an active layer of intrinsic amorphous silicon on the gate insulating layer and corresponding to the gate electrode; an ohmic contact layer of impurity-doped amorphous silicon on the active layer; a data line crossing the gate line; a source electrode on the ohmic contact layer and connected to the data line; a drain electrode on the ohmic contact layer and spaced apart from the source electrode; a passivation layer on the source and drain electrodes and including a drain contact hole exposing a portion of the drain electrode; and a pixel electrode on the passivation layer and connected to the drain electrode through the drain contact hole.
申请公布号 US2014240632(A1) 申请公布日期 2014.08.28
申请号 US201414276903 申请日期 2014.05.13
申请人 LG Display Co., Ltd. 发明人 KIM Cheol-Se;JO Jae-Hyung;YOO Duk-Keun
分类号 H01L27/12;G02F1/1343 主分类号 H01L27/12
代理机构 代理人
主权项 1. An array substrate for a liquid crystal display device, comprising: a gate line and a gate electrode on a substrate, the gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode; an active layer of intrinsic amorphous silicon on the gate insulating layer and corresponding to the gate electrode; an ohmic contact layer of impurity-doped amorphous silicon on the active layer; a data line crossing the gate line; a source electrode on the ohmic contact layer and connected to the data line; a drain electrode on the ohmic contact layer and spaced apart from the source electrode; a passivation layer on the source electrode and the drain electrode and including a drain contact hole exposing a portion of the drain electrode; a pixel electrode on the passivation layer and connected to the drain electrode through the drain contact hole; and a metal oxide layer on the ohmic contact layer and only in a space between the source electrode and the drain electrode, wherein the ohmic contact layer covers an entire top surface of the active layer in the space between the source electrode and the drain electrode.
地址 Seoul KR