| 摘要 |
A semiconductor light-emitting element includes a substrate (10, a recess (20) in the substrate (10), and a ridge portion (30) disposed in the recess (20), the ridge portion (30) having a constant width, in which the recess (20) has a width that varies in the longitudinal direction of the ridge portion (30), the ridge portion (30) is formed of a compound semiconductor multilayer structure including an active layer (43), and the active layer (43) has a thickness that varies in the longitudinal direction of the ridge portion (30). |
