| 摘要 |
The active-matrix substrate (100) of the present invention satisfies d2>d1 and d2+A1/2>d3+L1/2, where d1 is the length of the shortest line segment that connects together a channel region (134) and a gettering region (112) as measured by projecting the line segment onto a line that connects together the channel region (134) of a TFT (130) and a source contact portion, d2 is the distance from the channel region (134) to the source contact portion (132c), d3 is the distance from the channel region (134) to a first end portion (110a), L1 is the length of the first end portion (110a), and A1 is the length of the source contact portion (132c). |
