Semiconductor device and method for manufacturing semiconductor device

摘要

Disclosed is a semiconductor device (10) which comprises a glass substrate (12), a lower electrode layer (14), an n-type doped polycrystalline silicon semiconductor layer (16), a low-temperature insulating film (20) in which openings (22, 23) that serve as nuclei for growth of a nanowire (32) are formed, the nanowire (32) that is grown over the low-temperature insulating film (20) and has a core-shell structure, an insulating layer (50) that surrounds the nanowire (32), and an upper electrode layer (52). The nanowire (32) comprises an n-type GaAs core layer and a p-type GaAs shell layer. Alternatively, the nanowire can be formed as a nanowire having a quantum well structure, and InAs that can allow reduction of the process temperature can be used for the nanowire.

主权项

1. A semiconductor device, comprising:
a glass or film-like substrate; a polycrystalline silicon semiconductor layer formed with a (111)-plane parallel to a plane of the substrate; an insulating film with openings which covers the (111)-plane of the polycrystalline silicon semiconductor layer and in which a plurality of openings having a smaller area than an area of crystal grain of polycrystalline silicon over the (111)-plane are formed; and a plurality of nanowires which are formed of a III-V family compound semiconductor and which extend vertical to the (111)-plane of the polycrystalline silicon semiconductor layer at the opening of the insulating film with openings serving as a nucleus.