发明名称 Multi-chip stacking method to reduce voids between stacked chips
摘要 A multi-chip stacking method to reduce voids between stacked chips is revealed. A first chip is disposed on a substrate, and a plurality of first bonding wires are formed by wire bonding to electrically connect the first chip and the substrate. A second chip is disposed on an active surface of the first chip where a FOW (film over wire) adhesive is formed on a back surface of the second chip. The FOW adhesive partially encapsulates the first bonding wires and adheres to the active surface of the first chip. Then, the substrate is placed in a pressure oven to provide a positive pressure greater than one atm during thermally curing the FOW adhesive with exerted pressures. Accordingly, voids can be reduced inside the FOW adhesive during the multi-chip stacked processes where issues of poor adhesion and popcorn between chips can be avoided.
申请公布号 US8815645(B2) 申请公布日期 2014.08.26
申请号 US201113311257 申请日期 2011.12.05
申请人 Walton Advanced Engineering, Inc. 发明人 Lee Kuo-Yuan;Chen Yung-Hsiang;Chiu Wen-Chun
分类号 H01L21/00;H01L25/065;H01L23/00;H01L21/56;H01L25/00;H01L23/31 主分类号 H01L21/00
代理机构 Muncy, Geissler, Olds & Lowe, P.C. 代理人 Muncy, Geissler, Olds & Lowe, P.C.
主权项 1. A multi-chip stacking method to reduce voids between stacked chips comprising: providing a substrate having a top surface and a plurality of bonding fingers; disposing a first chip on the substrate by an adhesive, wherein the first chip has a first active surface, a first back surface, and a plurality of first bonding pads disposed on the first active surface, the adhesive adheres the first back surface of the first chip to the top surface of the substrate; forming a plurality of first bonding wires by wire-bonding to electrically connect the first bonding pads to the bonding fingers; disposing at least a second chip on the first active surface of the first chip by a FOW adhesive, wherein the second chip has a second active surface, a second back surface, and a plurality of second bonding pads disposed on the second active surface, wherein the FOW adhesive is formed on the second back surface of the second chip, and the FOW adhesive encapsulates a plurality of loop-height sections of the first bonding wires above the first active surface and is attached to the first active surface of the first chip; placing the substrate inside a pressure oven and thermally curing the FOW adhesive with exerted pressures to provide a positive pressure greater than one atm exerted on the FOW adhesive to reduce bubbles trapped inside the FOW adhesive; and forming a plurality of second bonding wires by wire-bonding to electrically connect the second bonding pads to the bonding fingers.
地址 Kaohsiung TW