Semiconductor diode and method of manufacture

摘要

A diode (200) is disclosed having improved efficiency, smaller form factor, and reduced reverse biased leakage current. Schottky diodes (212) are formed on the sidewalls (210) of a mesa region (206). The mesa region (206) is a cathode of the Schottky diode (212). The current path through the mesa region (206) has a lateral and a vertical current path. The diode (200) further comprises a MOS structure (214), p-type regions (220), MOS structures (230), and p-type regions (232). MOS structure (214) with the p-type regions (220) pinch-off the lateral current path under reverse bias conditions. P-type regions (220), MOS structures (230), and p-type regions (232) each pinch-off the vertical current path under reverse bias conditions. MOS structure (214) and MOS structures (230) reduce resistance of the lateral and vertical current path under forward bias conditions. The mesa region (206) can have a uniform or non-uniform doping concentration.

主权项

1. A method of forming a semiconductor device comprising the steps of:
forming trenches to a first depth in a semiconductor substrate to form a mesa region of a first conductivity type; placing dopant of a second conductivity type into a sidewall of the mesa region to form a first region of the second conductivity type, where the dopant is located a first predetermined distance below a major surface of the mesa region; forming a barrier metal overlying a portion of the sidewall of the mesa region to form a Schottky diode; and forming a MOS structure overlying the major surface of the mesa region, where a gate of the MOS structure is coupled to the barrier metal.