Nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes and a method for fabricating the same

摘要

A nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes, in which the nonvolatile memory electronic device, which comprises a semiconductor nanowire used as a charge transport channel and nanoparticles used as a charge trapping layer, is configured by allowing the nanoparticles to be adsorbed on a tunneling layer deposited on a surface of the semiconductor nanowire, whereby charge carriers moving through the nanowire are tunneled to the nanoparticles by a voltage applied to a gate, and then, the charge carriers are tunneled from the nanoparticles to the nanowire by the change of the voltage that has been applied to the gate, whereby the nonvolatile memory electronic device can be operated at a low voltage and increase the operation speed thereof.

主权项

1. A method for fabricating a nonvolatile electronic memory device including nanowire channel and nanoparticle-floating gate nodes, the method comprising:
preparing a semiconductor nanowire composite; forming a gate electrode in a central part of a nanowire on the semiconductor nanowire composite by photolithography or electron beam lithography; applying a sample of the nanowire composite/gate electrode formed nanowire composite to any one of SiO2 capped silicon, semiconductor, glass or plastic substrate; and forming source and drain electrodes on both ends of the nanowire on the SiO2 capped silicon semiconductor, glass or plastic substrate by photolithography or electron beam lithography, wherein the preparing of a semiconductor nanowire composite includes: coating a semiconductor nanowire with a tunneling layer by any one of atomic layer deposition, sputtering or chemical vapor deposition; adsorbing nanoparticles on the tunneling layer, the nanoparticles being formed into a charge trapping layer; and coating the nanoparticles with an insulating layer by any one of atomic layer deposition, sputtering or chemical vapor deposition.