| 摘要 |
PROBLEM TO BE SOLVED: To provide a growth method of a gallium nitride single crystal using a novel melt which can prevent wetting-up of the melt and deterioration of a reaction vessel, and which is not intermingled into a grown GaN single crystal as an impurity. ! SOLUTION: In a growth method, a melt is obtained by melting a raw material comprising tin, gallium, and one or more kinds of metals selected from a group comprising alkali metals and alkaline earth metals, and the melt and a gas phase containing a nitrogen source as an indispensable are heated in the contact state, to thereby grow a gallium nitride single crystal. ! COPYRIGHT: (C)2014,JPO&INPIT |
