| 摘要 |
PROBLEM TO BE SOLVED: To change a group III nitride semiconductor to a p-type with a less thermal load and at a high activation rate.SOLUTION: A p-type group III nitride semiconductor manufacturing method comprises: forming a transparent electrode 15 composed of an ITO on a p-contact layer 14; subsequently, performing a change of a p-clad layer 13 and the p-contact layer 14 to a p-type, and annealing of the transparent electrode 15 simultaneously as below. A wafer is introduced into a microwave heating device and microwave of a frequency of 5.8 GHz is radiated on the wafer in a nitrogen atmosphere to heat the wafer to 300-450°C for 3-30 minutes. This activates Mg in the p-clad layer 13 and the p-contact layer 14 thereby to change the p-clad layer 13 and the p-contact layer 14 to a p-type. At the same time, the transparent electrode 15 is subjected to annealing thereby to achieve improved crystallinity, low resistance and high transmissivity. |
