Methods of Forming Through Silicon Via Openings

摘要

A method of forming a through-silicon-via (TSV) opening includes forming a TSV opening through a substrate. A recast of a material of the substrate on sidewalls of the TSV opening is removed with a first chemical. The sidewalls of the TSV opening are cleaned with a second chemical by substantially removing a residue of the first chemical.

主权项

1. A method, comprising:
forming an opening in a substrate, the opening completely extending through the substrate, wherein a recast material is formed on sidewalls of the substrate exposed by the opening; applying a first chemical in the opening to remove the recast material, wherein a residue of the first chemical remains on portions of the sidewalls after the applying of the first chemical; and applying a second chemical in the opening to remove the residue of the first chemical, the second chemical being different from the first chemical.