发明名称 GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To suppress current leakage and improve the reliability.SOLUTION: A light-emitting element 100 comprises: a supporting body 101; a low-resistance conductive layer 113 bonded onto the supporting body 101 via a bonding layer 102; a high-resistance conductive layer 112 located on the low-resistance conductive layer 113; an insulating film 110 located on the high-resistance conductive layer 112; and a p-electrode 103 located on the insulating film 110. An opening 114 is opened in the insulating film 110. The high-resistance conductive layer 112 and the p-electrode 103 are bonded with each other via the opening 114. In addition, a first groove 108 is formed on a surface at the p-electrode 103 side, of a p-type layer 104. The first groove 108 has a depth reaching an n-type layer 106. An auxiliary electrode 109 is formed on a bottom face of the groove 108. The first groove 108 is filled with the insulating film 110. The high-resistance conductive layer 112 is made of a conductive material having a resistivity higher than that of the bonding layer 102.
申请公布号 JP2014150140(A) 申请公布日期 2014.08.21
申请号 JP20130017379 申请日期 2013.01.31
申请人 TOYODA GOSEI CO LTD 发明人 UEMURA TOSHIYA
分类号 H01L33/40;H01L33/32;H01L33/38 主分类号 H01L33/40
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