BIPOLAR JUNCTION TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A bipolar junction transistor (BJT) is provided. The BJT can include a semiconductor substrate, a first well disposed in the substrate and implanted with a first impurity, a second well disposed at one side of the first well and implanted with a second impurity, a first device isolation layer disposed in the first well and defining an emitter area, and a second device isolation layer disposed in the second well and defining a collector area, The BJT can also include an emitter having a second impurity, a base having a first impurity, a collector having a second impurity, and a high concentration doping area having a second impurity at high concentration. The high concentration doping area can be provided at one side of the collector in the second well.

主权项

1. A bipolar junction transistor (BJT), comprising:
a semiconductor substrate; a first well disposed in the substrate and implanted with an impurity of a first type; a second well disposed at one side of the first well and implanted with an impurity of a second type; a first device isolation layer disposed in the first well and defining an emitter area; a second device isolation layer disposed in the second well and defining a collector area; an emitter formed by implanting an impurity of the second type into one side of the first device isolation layer and contacting an electrode; a base formed by implanting an impurity of the first type into the other side of the first device isolation layer opposite of the emitter in the first well and contacting an electrode; a collector formed by implanting an impurity of the second type into one side of the second isolation layer in the second well and contacting an electrode; and a high concentration doping area formed by implanting an impurity of the second type at high concentration into one side of the collector in the second well.