发明名称 High-Resolution Readout of Analog Memory Cells
摘要 A method includes storing data in an analog memory cell by writing an analog value into the memory cell. After storing the data, the data stored in the memory cell is read by discharging electrical current to flow through the memory cell, during a predefined time interval, while applying a variable voltage to a gate of the memory cell. A fraction of the predefined time interval, during which the variable voltage allows the electrical current to flow through the memory cell, is estimated. The stored data is estimated based on the estimated fraction.
申请公布号 US2014233310(A1) 申请公布日期 2014.08.21
申请号 US201414259317 申请日期 2014.04.23
申请人 Apple Inc. 发明人 Maislos Ariel
分类号 G11C16/26 主分类号 G11C16/26
代理机构 代理人
主权项 1. A method for operating a memory, wherein the memory includes a plurality of memory cells, the method comprising: charging a bit line coupled to a selected one of the plurality of memory cells to a predetermined voltage; discharging the bit line through the selected one of the plurality of memory cells; estimating data stored in the selected one of the plurality of memory cells dependent upon a current resulting from the discharging of the bit line.
地址 Cupertino CA US