| 发明名称 |
P-SIDE LAYERS FOR SHORT WAVELENGTH LIGHT EMITTERS |
| 摘要 |
A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN. |
| 申请公布号 |
US2014231745(A1) |
申请公布日期 |
2014.08.21 |
| 申请号 |
US201213619598 |
申请日期 |
2012.09.14 |
| 申请人 |
Northrup John E.;Cheng Bowen;Chua Christopher L.;Wunderer Thomas;Johnson Noble M.;Yang Zhihong |
发明人 |
Northrup John E.;Cheng Bowen;Chua Christopher L.;Wunderer Thomas;Johnson Noble M.;Yang Zhihong |
| 分类号 |
H01L33/06;H01L33/00;H01L33/32 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting device, comprising:
a p-side heterostructure comprising a short period superlattice (SPSL) including alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9 and each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN; an n-side heterostructure; and an active region configured to emit light disposed between the SPSL and the n-side hetero structure. |
| 地址 |
Palo Alto CA US |
