| 发明名称 |
SEMICONDUCTOR DEVICE WITH BURIED BIT LINE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A semiconductor device includes: a punch stop region formed in a substrate; a plurality of buried bit lines formed over the substrate; a plurality of pillar structures formed over the buried bit lines; a plurality of word lines extending to intersect the buried bit lines and being in contact with the pillar structures; and an isolation layer isolating the word lines from the buried bit lines. |
| 申请公布号 |
US2014232014(A1) |
申请公布日期 |
2014.08.21 |
| 申请号 |
US201414264832 |
申请日期 |
2014.04.29 |
| 申请人 |
SK hynix Inc. |
发明人 |
CHO Heung-Jae;JEON Bong-Seok |
| 分类号 |
H01L23/48;H01L27/108 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a punch stop region formed in a substrate; a plurality of buried bit lines formed over the substrate; a plurality of pillar structures formed over the buried bit lines; a plurality of word lines extending to intersect the buried bit lines and being in contact with the pillar structures; and an isolation layer isolating the word lines from the buried bit lines. |
| 地址 |
Gyeonggi-do KR |
