| 摘要 |
Disclosed are a phase change memory device and a method of manufacturing the same. The phase change memory device includes an insulator substrate; a catalyst terminal which is formed on the insulator substrate; an electrode layer which includes carbon nanotubes, which are formed on the surface of a substrate from the catalyst terminal in a longitudinal direction and have a gap electrically isolated at a certain point, and a metal electrode fixed to both sides of the carbon nanotubes; and a phase change material which is formed in the gap by a self-alignment method and electrically touches the carbon nanotubes. |
