| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor substrate capable of forming a semiconductor element having favorable crystallinity and high performance. SOLUTION: A single-crystal semiconductor substrate having a brittle layer is bonded to a base substrate via an insulating layer; the single-crystal semiconductor substrate is separated with the brittle layer as a boundary by heat treatment; a single-crystal semiconductor layer is fixed on the base substrate; and laser beams are applied to the single-crystal semiconductor layer for turning the single-crystal semiconductor layer into a partially melted state for recrystallization and recovering crystal defects. In concentration distribution in the depth direction of the single-crystal semiconductor layer after the recrystallization, a carbon concentration has the local maximum. COPYRIGHT: (C)2010,JPO&INPIT |
