Method of writing to a spin torque magnetic random access memory

摘要

A method includes destructively reading bits of a spin torque magnetic random access memory and immediately writing back the original or inverted values. A detection of the majority state of the write back bits and a conditional inversion of write back bits are employed to reduce the number of write back pulses. A subsequent write command received within a specified time or before an original write operation is commenced will cause a portion of the write back pulses or the original write operation pulses to abort. Write pulses during subsequent write operations will follow the conditional inversion determined for the write back bits during destructive read.

主权项

1. A method of reading and writing to a plurality of bits in a spin-torque magnetoresistive memory array, the method comprising:
sampling the bits in the spin-torque magnetoresistive memory array; setting the bits to a first state in the magnetoresistive spin-torque memory array; resampling the bits to evaluate states of the bits; storing a value of each of the bits in one of a plurality of latches, the value being either the first state or a second state; reading the values of the bits in the latches; and initiating a first resetting of the bits in the spin-torque magnetoresistive memory array to the second state if a stored value for a bit was the second state in the plurality of latches.