| 发明名称 | Semiconductor device having isolation region | ||
| 摘要 | A semiconductor device can include an isolation region that defines a plurality of active regions. The plurality of active regions can include an upper surface having a short axis in a first direction and a long axis in a second direction. The plurality of active regions can be repeatedly disposed along the first direction and along the second direction, and can be spaced apart from each other. The isolation region can include a first insulating layer being in contact with side walls of a short axis pair of active regions which can be the closest active regions in the first direction among the plurality of active regions, and continuously extending along a first shortest distance between the short axis pair of active regions. | ||
| 申请公布号 | US8809993(B2) | 申请公布日期 | 2014.08.19 |
| 申请号 | US201313772775 | 申请日期 | 2013.02.21 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Kwak Sei-lyn;Jang Se-myeong;Kang Min-sung;Lee Yun-jae;Lee Hyeon-kyu |
| 分类号 | H01L29/00 | 主分类号 | H01L29/00 |
| 代理机构 | Myers Bigel Sibley & Sajovec, P.A. | 代理人 | Myers Bigel Sibley & Sajovec, P.A. |
| 主权项 | 1. A semiconductor device comprising: a plurality of active regions including an upper surface having a short axis in a first direction and a long axis in a second direction, the plurality of active regions being repeatedly disposed along the first direction and along the second direction, and being spaced apart from each other; and an isolation region defining the plurality of active regions, wherein the isolation region including a first insulating layer being in contact with side walls of a short axis pair of active regions which are closest active regions in the first direction among the plurality of active regions, and continuously extending along a first shortest distance between the short axis pair of active regions. | ||
| 地址 | KR | ||