发明名称 |
INTERLAYER POLYSILICON DIELECTRIC CAP AND METHOD OF FORMING THEREOF |
摘要 |
<p>In some embodiments, an interlayer polysilicon dielectric cap disposed atop a substrate having a first floating gate, a second floating gate and an isolation layer disposed between the first floating gate and the second floating gate may include: a first nitrogen containing layer disposed atop an upper portion and sidewalls of the first floating gate and second floating gate; a first oxygen containing layer disposed atop the first nitrogen containing layer and an upper surface of the isolation layer; a second nitrogen containing layer disposed atop an upper portion and sidewalls of the first oxygen containing layer; and a second oxygen containing layer disposed atop the second nitrogen containing layer and an upper surface of the first oxygen containing layer.</p> |
申请公布号 |
KR20140100948(A) |
申请公布日期 |
2014.08.18 |
申请号 |
KR20147015276 |
申请日期 |
2012.11.07 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ROGERS MATTHEW S.;SCHUEGRAF KLAUS |
分类号 |
H01L27/115;H01L21/205;H01L21/31;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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