| 摘要 |
Some embodiments include integrated devices, such as memory cells. The devices may include chalcogenide material, an electrically conductive material over the chalcogenide material, and a thermal sink between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material. Some embodiments include a method of forming a memory cell. Chalcogenide material may be formed over heater material. Electrically conductive material may be formed over the chalcogenide material. A thermal sink may be formed between the electrically conductive material and the chalcogenide material. The thermal sink may be of a composition that includes an element in common with the electrically conductive material and includes an element in common with the chalcogenide material. |
