| 摘要 |
A 300mm silicon wafer manufacturing process by high temperature heat treatment, comprising the process steps of: crystal pulling, slicing angle guiding, double-sided grinding, double-sided polishing, final polishing and high temperature heat treatment. In the manufacturing process of the present invention, the double-sided grinding step is retained, and grinding is directly followed by polishing, eliminating the single-sided grinding step; and the micro-damage on the surface layer not eliminated by the polishing process is removed by the subsequent high temperature heat treatment. The process flow is simple, and can improve both production efficiency and silicon wafer quality. |
