METHOD OF MAKING A GAS DISTRIBUTION MEMBER FOR A PLASMA PROCESSING CHAMBER

摘要

A method of making a Si containing gas distribution member for a semiconductor plasma processing chamber comprises forming a carbon member into an internal cavity structure of the Si containing gas distribution member. The method includes depositing Si containing material on the formed carbon member such that the Si containing material forms a shell around the formed carbon member. The Si containing shell is machined into the structure of the Si containing gas distribution member wherein the machining forms gas inlet and outlet holes exposing a portion of the formed carbon member in an interior region of the Si containing gas distribution member. The method includes removing the formed carbon member from the interior region of the Si containing gas distribution member with a gas that reacts with carbon, dissociating the carbon atoms, which may thereby be removed from the interior region of the Si containing gas distribution member leaving a shaped internal cavity in the interior region of the Si containing gas distribution member.

主权项

1. A method of making a Si containing gas distribution member which supplies process gas into a semiconductor plasma processing chamber comprising:
forming a carbon member into a form corresponding to an internal cavity structure of the Si containing gas distribution member; depositing a Si containing material on the formed carbon member such that the Si containing material forms a shell of a predetermined thickness around the formed carbon member; machining the Si containing shell into the structure of the Si containing gas distribution member wherein the machining forms gas inlet and outlet holes exposing a portion of the formed carbon member in an interior region of the Si containing gas distribution member; and removing the formed carbon member from the interior region of the Si containing gas distribution member with a gas that reacts with carbon, dissociating the carbon atoms, which may thereby be removed from the interior region of the Si containing gas distribution member leaving a shaped internal cavity in the interior region of the Si containing gas distribution member.