METAL-INSULATOR-METAL CAPACITOR UNDER REDISTRIBUTION LAYER

摘要

A metal-insulator-metal (MIM) capacitor reduces a number of masks and processing steps compared to conventional techniques. A first conductive layer of a MIM capacitor is deposited on a semiconductor chip and patterned using a MIM conductive layer mask. A conductive redistribution layer (RDL) is patterned over the MIM dielectric layer. The conductive redistribution layer includes two RDL nodes that overlap the first conductive layer of the MIM capacitor. A conductive via or bump extends through the MIM dielectric layer and couples one of the RDL nodes to the first conductive layer of the MIM capacitor.

主权项

1. A method of constructing a metal-insulator-metal (MIM) capacitor, comprising:
depositing a MIM capacitor conductive layer on a semiconductor chip; patterning the MIM capacitor conductive layer using a single MIM capacitor mask; depositing a MIM dielectric layer on the MIM capacitor conductive layer; patterning a redistribution layer (RDL) on the MIM dielectric layer, the redistribution layer including a first RDL node overlapping the MIM capacitor conductive layer and a second RDL node overlapping the MIM capacitor conductive layer; and fabricating a conductive inter-layer pathway that couples to the MIM capacitor conductive layer.