| 摘要 |
Provided is a nitride semiconductor deep ultraviolet light-emitting element having exceptional light-emitting efficiency. A nitride semiconductor light-emitting element having a light-emission wavelength of 200-300 nm, wherein said element has an n-type layer comprising a single layer or a plurality of layers with differing bandgaps, a p-type layer comprising a single layer or a plurality of layers with differing bandgaps, and an active layer arranged between the n-type layer and the p-type layer. The p-type layer has a p-type first layer having a bandgap that is larger than the bandgap of the n-type first layer having the smallest bandgap within the n-type layer. An electron block layer is provided between the active layer and the p-type first layer, the electron block layer having a bandgap that is larger than the bandgaps of any of the layers forming the active layer and the p-type layer. |
