SEMICONDUCTOR DEVICE

摘要

An object is to provide a semiconductor device that includes an oxide semiconductor and is suitable for a power device. An object is to provide a semiconductor device in which large current can flow. An object is to provide a highly reliable semiconductor device. A semiconductor device includes an oxide stack in which a first oxide layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second oxide layer are stacked and has a structure in which a region that contains an element imparting conductivity and is provided in the first oxide semiconductor layer overlaps an electrode functioning as a source electrode and does not overlap an electrode functioning as a drain electrode.

主权项

1. A semiconductor device comprising:
an oxide stack in which a first oxide layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second oxide layer are stacked sequentially over a substrate; a first electrode and a second electrode that are in contact with part of the second oxide layer and separated from each other; a gate insulating layer over the second oxide layer; and a gate electrode over the gate insulating layer to overlap the oxide stack; wherein the first oxide semiconductor layer includes a first region and a second region, wherein a side portion and a bottom portion of the second region are in contact with the first region, and a top portion of the second region is in contact with the second oxide semiconductor layer, wherein the second region and the first electrode overlap each other and the second region and the second electrode do not overlap each other, and wherein the second region has a higher concentration of an element imparting conductivity to the first oxide semiconductor layer than the first region.