SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME
摘要
A manufacturing method of a semiconductor memory device is provided. The method comprises forming an electrode structure by alternately laminating insulating layers and electrode layers on a substrate; forming a channel hole passing through the electrode structure; forming an information storage film on a sidewall of the channel hole; and forming a semiconductor pattern electrically connected to the substrate on a sidewall of the information storage film. The electrode layers are metal-silicide layers. The insulating layers and the electrode layers are formed in-situ within the same deposition device.
申请公布号
KR20140099739(A)
申请公布日期
2014.08.13
申请号
KR20130012523
申请日期
2013.02.04
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
SOHN, WOONG HEE;YUN, KI HYUN;LEE, MYOUNG BUM;LEE, JEONG GIL;LIM, TAI SOO;JUNG, YONG CHAE