发明名称 |
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT AND ETCHING METHOD UTILIZED THEREIN |
摘要 |
<p>A method of producing a semiconductor substrate product, the method containing: a step of preparing an aqueous solution containing 7% by mass or more and 25% by mass or less of a quaternary alkyl ammonium hydroxide; a step of preparing a semiconductor substrate having a silicon film comprising a polycrystalline silicon film or an amorphous silicon film; and a step of heating the aqueous solution at 80° C. or higher and applying the resultant aqueous solution onto the semiconductor substrate to etch at least a part of the silicon film.</p> |
申请公布号 |
KR20140099955(A) |
申请公布日期 |
2014.08.13 |
申请号 |
KR20147020565 |
申请日期 |
2012.12.26 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
ENOKIDO MASASHI;INABA TADASHI;MIZUTANI ATSUSHI |
分类号 |
H01L21/306;H01L21/308;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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