Method for producing semiconductor components on a substrate, and substrate comprising semiconductor components

摘要

A method for producing semiconductor components on a substrate including photolithographic patterning steps, in which method, on the substrate, a first layer to be patterned is applied and a second layer serving as a mask layer for the first layer to be patterned is applied, wherein a third layer serving as a mask for the second layer is applied, and wherein at least two photolithographic patterning processes are carried out successively for the second layer, wherein, during one of the patterning processes, after the production of a structure made from a photosensitive layer for the provision of a mask layer for a patterning process at the third layer, positive ramp angles α are produced at the patterning edges of the third layer, as a result of which the structures remaining free, given a thickness h of the third layer, decrease in size by a value D=2*h/tan α.

主权项

1. A method for producing semiconductor components on a substrate using photolithographic patterning, the method comprising the steps of:
providing a substrate; providing a first layer to be patterned on the substrate; providing a second layer as a mask layer for the first layer on the first layer; providing a third layer as a mask layer for the second layer on the second layer; patterning the third layer by
performing at least a first photolithographic patterning process to produce a first photosensitive layer structure on the third layer to define a first mask, whereby positive ramp angles α are produced at patterning edges of the third layer, wherein exposed portions of the third layer, given a thickness h of the third layer, decrease in size by a value D=2*h/tan α, andperforming at least a second photolithographic patterning process to produce a second photosensitive layer structure on the third layer to define a second mask, whereby negative ramp angles β are produced at the patterning edges of the third layer, wherein remaining portions of the second photosensitive layer structure, given a thickness h of the third layer, decrease in size by a value W=2*h/tan β; and patterning at least a portion of the second layer via the respectively patterned third layer.