METHOD OF FORMING HIGH-QUALITY MOS STRUCTURES WITH POLYSILICON GATE

摘要

FIELD: physics.SUBSTANCE: invention relates to microelectronics and can be used to produce high-quality, high-power double-diffused MOS transistor, CMOS integrated circuits and CCD devices. The method includes thermal annealing of MOS structures in the temperature range of 600-850°C in an electric field with field intensity of 10-100 V/cm, while simultaneously irradiating with light in the visible and near-infrared spectrum in the wavelength range ?=0.5-1.4 mcm with radiation intensity of 1-10 W/cmand with a polysilicon gate with thickness of not more 0.6 mcm on an oxide located on a silicon substrate.EFFECT: said processing enables to obtain high-quality MOS structures with minimum surface-state density Nof less than 10cm, minimum spread of threshold values ?Vof less than 0,05 V and maximum critical field value Egreater than 2·10V/cm.5 dwg