3-D Memory Arrays

摘要

A 3-D memory array comprises a plurality of elevationally extending strings of memory cells. An array of select devices is elevationally over and individually coupling with individual of the strings. The select devices individually comprise a channel, gate dielectric proximate the channel, and gate material proximate the gate dielectric. The individual channels are spaced from one another. The gate material comprises a plurality of gate lines running along columns of the spaced channels elevationally over the strings. Dielectric material is laterally between immediately adjacent of the gate lines. The dielectric material and the gate lines have longitudinally non-linear edges at an interface relative one another. Additional embodiments are disclosed.

主权项

1. A 3-D memory array, comprising:
a plurality of elevationally extending strings of memory cells; an array of select devices elevationally over and individually coupling with individual of the strings; the select devices individually comprising a channel, gate dielectric proximate the channel, and gate material proximate the gate dielectric; the individual channels being spaced from one another; the gate material comprising a plurality of gate lines running along columns of the spaced channels elevationally over the strings; and dielectric material laterally between immediately adjacent of the gate lines, the dielectric material and the gate lines having longitudinally non-linear edges at an interface relative one another.