| 发明名称 |
POWER TRANSISTOR ARRANGEMENT AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
Various embodiments provide a power transistor arrangement. The power transistor arrangement may include a carrier; a first power transistor having a control electrode and a first power electrode and a second power electrode; and a second power transistor having a control electrode and a first power electrode and a second power electrode. The first power transistor and the second power transistor may be arranged next to each other on the carrier such that the control electrode of the first power transistor and the control electrode of the second power transistor are facing the carrier. |
| 申请公布号 |
US2014217596(A1) |
申请公布日期 |
2014.08.07 |
| 申请号 |
US201313759161 |
申请日期 |
2013.02.05 |
| 申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
Otremba Ralf;Hoeglauer Josef;Schredl Juergen;Schloegel Xaver;Schiess Klaus |
| 分类号 |
H01L23/48;H01L21/50 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power transistor arrangement, comprising:
a carrier; a first power transistor having a control electrode and a first power electrode and a second power electrode; a second power transistor having a control electrode and a first power electrode and a second power electrode; wherein the first power transistor and the second power transistor are arranged next to each other on the carrier such that the control electrode of the first power transistor and the control electrode of the second power transistor are facing the carrier. |
| 地址 |
Villach AT |
