SEMICONDUCTOR DEVICE WITH ENHANCED 3D REDUCED SURFACE FIELD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with an enhanced 3D RESURF effect.SOLUTION: A device includes a semiconductor substrate, and source and drain regions in the semiconductor substrate are separated from one another along a first lateral direction. Charge carriers drift through a drift region in the semiconductor substrate during operation upon application of a bias voltage between the source and drain regions. The drift region has a dopant profile with a notched portion in a second lateral direction along an interface between the drift region and the drain region.