| 发明名称 |
Method Of Fabricating Mask |
| 摘要 |
A method for fabricating an extreme ultraviolet (EUV) mask includes providing a low thermal expansion material (LTEM) layer. A reflective multiple-layer (ML) is deposited over the LTEM layer. A flowable-photosensitive-absorption-layer (FPhAL) is spin coated over the reflective ML. The FPhAL is patterned by a lithography process to form a patterned absorption layer. |
| 申请公布号 |
US2014272683(A1) |
申请公布日期 |
2014.09.18 |
| 申请号 |
US201314052060 |
申请日期 |
2013.10.11 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Yen Anthony;Shih Chih-Tsung;Yao Ming-Jiun;Lu Yen-Cheng;Yu Shinn-Sheng;Chen Jeng-Horng;Lee Hsin-Chang |
| 分类号 |
G03F1/76 |
主分类号 |
G03F1/76 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating an extreme ultraviolet (EUV) mask, the method comprising:
providing a low thermal expansion material (LTEM) layer; forming a reflective multiple-layer (ML) over the LTEM layer; forming a conductive layer over an opposite surface of the LTEM layer; spin-coating a flowable-photosensitive-absorption-layer (FPhAL) over the reflective ML; and patterning the FPhAL by a lithography process to form a patterned absorption layer having a first region and a second region, wherein the FPhAL is removed in the first region and remains in the second region. |
| 地址 |
Hsin-Chu TW |
