发明名称 SPUTTERING FILM FORMING DEVICE
摘要 <p>A sputtering film forming device (1) is provided with: a dielectric part (30) for a target; a microwave plasma generating mechanism (5) which is provided with a rectangular waveguide (51) which transmits microwaves and has a slot antenna (510) in which a slot (511) through which the microwaves pass is formed, wherein the slot (511) is covered by the dielectric part (30) and plasma (P1) is generated on a front surface (300) of the dielectric part (30) by the microwaves that pass through the slot (511); a high-frequency plasma generating mechanism (4) that is disposed on a reverse surface of the dielectric part (30), which is on the reverse side from the front surface (300) thereof, and that generates plasma (P2) at a high frequency; and a base material (20) disposed facing the front surface (300) of the dielectric part (30). The sputtering film forming device (1) causes sputtering particles that have been ejected from the dielectric part (30) to deposit on the base material (20) so as to form a thin film.</p>
申请公布号 WO2014119653(A1) 申请公布日期 2014.08.07
申请号 WO2014JP52063 申请日期 2014.01.30
申请人 TOKAI RUBBER INDUSTRIES, LTD.;NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY 发明人 SASAI KENSUKE;TOYODA HIROTAKA
分类号 C23C14/34;C23C14/40 主分类号 C23C14/34
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